maximum ratings rating symbol value unit collectoremitter voltage v ceo 40 vdc collectorbase voltage v cbo 75 vdc emitterbase voltage v ebo 6.0 vdc collector current continuous i c 600 madc thermal charac t eristics characteristic symbol max unit total package dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg 55 to +150 c q 1 (1) (2) (3) (4) (5) (6) q 2 dual general purpose transistors npn silicon 1 3 2 6 4 5 s-lmbt2222adw1t1g sc-88 we declare that material of product compliance with rohs requirements. ordering information device shipping lmbt2222adw1t1g 10000/tape & reel 3000/tape & reel lmbt2222adw1t3g leshan radio com p an y , ltd. marking xx xx rev.o 1/7 lmbt2222adw1t1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lmbt2222adw1t1g s-lmbt2222adw1t3g
electrical characteristics (t a = 25 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 40 vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 75 vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i cex 10 nadc collector cutoff current (v cb = 60 vdc, i e = 0) (v cb = 60 vdc, i e = 0, t a = 125 5 c) i cbo 0.01 10 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i bl 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = 55 5 c) (i c = 150 madc, v ce = 10 vdc) (note 2) (i c = 150 madc, v ce = 1.0 vdc) (note 2) (i c = 500 madc, v ce = 10 vdc) (note 2) h fe 35 50 75 35 100 50 40 300 collector emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) 0.3 1.0 vdc base emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 1.2 2.0 vdc 2. pulse test: pulse width 3 300 s, duty cycle 3 2.0%. lmbt2222adw1t1g leshan radio com p an y , ltd. rev.o 2/7 ;s-lmbt2222adw1t1g
smallsignal characteristics currentgain bandwidth product (note 3) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h ie 2.0 0.25 8.0 1.25 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h re 8.0 4.0 x 10 4 small signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h fe 50 75 300 375 output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) rb, c c 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k w , f = 1.0 khz) nf 4.0 db switching characteristics delay time (v cc = 30 vdc, v be ( off ) = 0.5 vdc, t d 10 ns rise time (v cc 30 vdc, v be(off) 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t r 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s 225 ns fall time (v cc 30 vdc, i c 150 madc, i b1 = i b2 = 15 madc) t f 60 ns 3. f t is defined as the frequency at which |h fe | extrapolates to unity. leshan radio com p an y , ltd. rev.o 3/7 lmbt2222adw1t1g ;s-lmbt2222adw1t1g
figur e 1 . dc current gain figur e 2 . collector saturation region figure 3 . t ur n on t ime figur e 4 . t ur n off t ime leshan radio com p an y , ltd. 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) h fe , dc current gain t j = 125 c 25 c -55 c v ce = 1.0 v v ce = 10 v v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) t j = 25 c i c = 1.0 ma 10 ma 150 ma 500 ma i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f rev.o 4/7 lmbt2222adw1t1g ;s-lmbt2222adw1t1g
figur e 5 . frequency effects figur e 6 . source resistance effects figur e 7 . capacitances figur e 8 . currentgain bandwidth product figur e 9. collector emitter saturation voltage figur e 10 . base emitter saturation voltage vs. leshan radio com p an y , ltd. f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 1.3 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 150 c ? 55 c 25 c 0.4 0.6 0.9 1.2 i c /i b = 10 150 c ? 55 c 25 c vs. collector current collector current rev.o 5/7 lmbt2222adw1t1g ;s-lmbt2222adw1t1g
leshan radio com p an y , ltd. i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base ? emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 c ? 55 c 25 c i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 50 0 v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms figur e 11. base emitter voltage vs. collector current figur e 12. temperature coefficients figur e 13. safe operating area rev.o 6/7 lmbt2222adw1t1g ;s-lmbt2222adw1t1g
sot363/sc88 dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10--- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 b 0.2 (0.008) mm 123 a g v s h c n j k 654 b d 6 pl leshan radio com p an y , ltd. rev.o 7/7 lmbt2222adw1t1g ;s-lmbt2222adw1t1g
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